Oerlikon Systems

Applications and Features

Front metal of discrete devices: Typical power devices

Characteristics:

• Single AI layers: AISi, AlSiCu: 1 - 5 um, "warm": 150 - 300 degrees C, 15 - 18 kW

Features and Benefits of the CLUSTERLINE 200 II: Excellent thermal coupling chuck-wafer Mechanical clamping: NO Al sticking Finger clamp of the least edge exclusion Hot and cold electrostatic clamping available Higher throughput and flexibility

Hot Al reflow on front metals of BiCMOS/Bipolar devices

Characteristics:

• 2-step (3-step) cold/hot Al layers: AlCu, AlSiCu: 0.7 - 2 um hot reflow 480 - 500 degrees C, Ti - AlSiCu hot - TIN ARC

Features and Benefits of the CLUSTERLINE 200 II: Excellent thermal coupling chuck-wafer Mechanical clamping: No Al sticking Finger clamp of the least edge exclusion Higher throughput and flexibility

Multi-level interconnects of CMOS devices

Characteristics:

• Layer stack of typ. Ti - Al - TiN ARC: AlCu: 0.4 - 2 um, "warm": 150 - 300 degrees C, Al power 15 - 18 kW

Features and Benefits of the CLUSTERLINE 200 II: Full-face-deposition by using electrostatic chucks Cost efficient ESC design Higher throughput and flexibility

Liner/barriers for CMOS metallization down to 0.18um (l-PVD)

Characteristics:

• Seed and barrier film for via and contact holes: Ti/TiN: "warm": 150 - 300 degrees C, e.g. Ti (300A) - TiN (500 - 3000A)
  

Features and Benefits of the CLUSTERLINE 200 II:

• Ti/TiN on one module
  
• Full-face-depostion
• Servicing/maintainability